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BS616LV1611

Features: ` Wide VCC operation voltage : 2.4V ~ 5.5V` Very low power consumption : VCC = 3.0V Operation current : 46mA (Max.)at 55ns 2mA (Max.)at 1MHz Standby current : 1.5uA (Typ.) at 25 VCC = 5.0V Operation current : 115mA (Max.)at 55ns 10mA (Max.)at 1MHz Standby current : 6.0uA (Typ.) at 25` Hi...

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SeekIC No. : 004301806 Detail

BS616LV1611: Features: ` Wide VCC operation voltage : 2.4V ~ 5.5V` Very low power consumption : VCC = 3.0V Operation current : 46mA (Max.)at 55ns 2mA (Max.)at 1MHz Standby current : 1.5uA (Typ.) at 25 VCC = 5.0V...

BS616LV1611 Data Sheet

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Part Number:
BS616LV1611
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 ` Wide VCC operation voltage : 2.4V ~ 5.5V
 ` Very low power consumption :
      VCC = 3.0V     Operation current : 46mA (Max.)at 55ns
                                                            2mA (Max.)at 1MHz
                             Standby current :   1.5uA (Typ.) at 25
       VCC = 5.0V    Operation current : 115mA (Max.)at 55ns
                                                            10mA (Max.)at 1MHz
                             Standby current :    6.0uA (Typ.) at 25
 ` High speed access time :
      -55    55ns(Max.) at VCC=3.0~5.5V
      -70    70ns(Max.) at VCC=2.7~5.5V
 ` Automatic power down when chip is deselected
 ` Easy expansion with CE2, CE1 and OE options
 ` I/O Configuration x8/x16 selectable by LB and UB pin.
 ` Three state outputs and TTL compatible
 ` Fully static operation, no clock, no refresh
 ` Data retention supply voltage as low as 1.5V


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
RATING
UNITS
VTERM Terminal Voltage with Respect to GND
-0.5(2) to +7.0
V
TBIAS Temperature Under Bias
-40 to +125
TSTG Storage Temperature
-60 to +150
PT Power Dissipation
1.0
W
IOUT DC Output Current
20
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. 2.0V in case of AC pulse width less than 30 ns.


Description

The BS616LV1611 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 1.5uA at 3.0V/25 and maximum access time of 55ns at 3.0V/85.

Easy memory expansion of BS616LV1611 is provided by an active LOW chip enable (CE1), active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers.

The BS616LV1611 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BS616LV1611 is available in 48-pin TSOP Type I package and 48-ball BGA package.




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