Features: • Vcc operation voltage : 4.5V ~ 5.5V• Very low power consumption : Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current• High speed access time : -55 55ns (Max.) at Vcc = 5.0V• Automatic pow...
BS616LV1015: Features: • Vcc operation voltage : 4.5V ~ 5.5V• Very low power consumption : Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMO...
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Features: • Very low operation voltage : 2.4 ~ 5.5V• Very low power consumption : Vcc ...
SYMBOL | PARAMETER | RATING | UNITS |
VTERM | Terminal Voltage with Respect to GND |
-0.5 to Vcc+0.5 |
V |
TBIAS | Temperature Under Bias | -40 to +85 | |
TSTG | Storage Temperature | -60 to +150 | |
PT | Power Dissipation | 1.0 | W |
IOUT | DC Output Current | 20 | mA |
The BS616LV1015 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques of BS616LV1015 provide both high speed and low power features with a typical CMOS standby current of 0.4uA and maximum access time of 55ns in 5V operation.
Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers.
The BS616LV1015 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
The BS616LV1015 is available in the JEDEC standard 44-pin TSOP
Type II and 48-pin BGA package.