BS616LV1013

Very low operation voltage : 2.7 ~ 3.6V
Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current High speed access time :
-70 70ns (Max.) at Vcc = 3.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by  LB and UB pin

The BS616LV1013 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features of BS616LV1013 with a typical CMOS standby current of 0.02uA and maximum access time of 70ns in 3.0V operation. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers.

The BS616LV1013 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1013 is available in the JEDEC standard 44-pin TSOP Type II and 48-pin BGA package.