BS616LV1011

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The BS616LV1011 is a high performance , very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques of BS616LV1011 provide both high speed and low power features with a typical CMOS standby current of 0.4uA at 3V/25oC and maximum access time of 55ns at 3V/85oC.

Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable(OE) and three-state output drivers. The BS616LV1011 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BS616LV1011 is available in the JEDEC standard 44-pin TSOP Type II and 48-pin BGA package.