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BS170_L34Z

MOSFET NCh Enhancement Mode

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SeekIC No. : 00161180 Detail

BS170_L34Z: MOSFET NCh Enhancement Mode

BS170_L34Z Data Sheet

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Part Number:
BS170_L34Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 500 mA
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-92
Resistance Drain-Source RDS (on) : 1.2 Ohms
Continuous Drain Current : 500 mA


Parameters:

Technical/Catalog InformationBS170_L34Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C500mA
Rds On (Max) @ Id, Vgs5 Ohm @ 200mA, 10V
Input Capacitance (Ciss) @ Vds 40pF @ 10V
Power - Max830mW
PackagingBulk
Gate Charge (Qg) @ Vgs-
Package / CaseTO-92
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BS170_L34Z
BS170_L34Z



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