BS170

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-92
Resistance Drain-Source RDS (on) : 1.2 Ohms
Continuous Drain Current : 0.5 A


Features:

Low On-Resistance: 2.5
Low Threshold: 2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output Leakage




Application

Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays




Pinout






Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Single		Total Quad	BS170	Unit
			VQ1000J	VQ1000P	VQ1000J/P
Drain-Source Voltage		VDS	60	60		60	V
Gate-Source Voltage-Non-Repetitive		VGSM	±30			±25
Gate-Source Voltage-Continuous		VGS	±20	±20		±20
Continuous Drain Currentd (TJ = 175)	TA = 25	ID	0.225	0.225		0.5	A
	TA = 100		0.14	0.14		0.175
Pulsed Drain Current		IDM	1	1
Power Dissipation	TA = 25	PD	1.3	1.3	2	0.83	W
	TA = 100		0.52	0.52	0.8
Thermal Resistance, Junction-to-Ambient		RthJA	96	96	62.5	156	/W
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 155

Description

The BS170 is designed as one kind of N-channel enhancement mode field effect transistor which produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Features of the BS170 are:(1)high density cell design for low RDS(ON);(2)voltage controlled small signal switch;(3)rugged and reliable;(4)high saturation current capability.

The absolute maximum ratings of the BS170 can be summarized as:(1)drain-source voltage:60 V;(2)drain-gate voltage (RGS<1M):60 V;(3)gate-source voltage:±20 V;(4)drain current-continuous:500 mA;(5)drain current-pulsed:1200 mA;(6)maximum power dissipation:830 mW;(7)derate above 25°C:6.6 mW/°C;(8)operating and storage temperature range:-55 to 150 °C;(9)maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds: 300°C;(10)thermal resistacne,junction-to-ambient:150°C/W;(11)drain-source breakdown voltage:60 V;(12)zero gate voltage drain current:0.5 A;(13)gate-body leakage,forward:10 nA.If you want to know more information such as the electrical characteristics about the BS170,please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	BS170
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	500mA
Rds On (Max) @ Id, Vgs	5 Ohm @ 200mA, 10V
Input Capacitance (Ciss) @ Vds	60pF @ 10V
Power - Max	350mW
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92-3, TO-226AA (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BS170 BS170 BS170OS ND BS170OSND BS170OS