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BS170_D75Z

MOSFET N-Ch Enhancement Mode Field Effect

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SeekIC No. : 00149112 Detail

BS170_D75Z: MOSFET N-Ch Enhancement Mode Field Effect

BS170_D75Z Data Sheet

floor Price/Ceiling Price

US $ .09~.21 / Piece | Get Latest Price
Part Number:
BS170_D75Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.21
  • $.16
  • $.12
  • $.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 500 mA
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92-3 Kinked Lead Packaging : Ammo    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 1.2 Ohms
Package / Case : TO-92-3 Kinked Lead
Packaging : Ammo
Continuous Drain Current : 500 mA


Parameters:

Technical/Catalog InformationBS170_D75Z
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C500mA
Rds On (Max) @ Id, Vgs5 Ohm @ 200mA, 10V
Input Capacitance (Ciss) @ Vds 40pF @ 10V
Power - Max830mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseTO-92
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BS170_D75Z
BS170_D75Z
BS170_D75ZCT ND
BS170_D75ZCTND
BS170_D75ZCT



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