Features: TrenchFET Power MOSFETESD Protected: 2000 VApplicationDirect Logic-Level Interface: TTL/CMOSSoild State RelaysDrivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.Battery Operated SystemsSpecifications Parameter Symbol Limit Unit Drain-Source Vol...
BS170KL: Features: TrenchFET Power MOSFETESD Protected: 2000 VApplicationDirect Logic-Level Interface: TTL/CMOSSoild State RelaysDrivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, e...
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Parameter | Symbol | Limit | Unit |
Drain-Source Voltage | VDS | 60 |
V |
Gate-Source Voltage |
VGS | 20 | |
Continuous Drain Current (TJ = 150) TA = 25 |
ID | 0.47 |
A |
Continuous Drain Current (TJ = 150) TA = 70 | IDM | 0.37 | |
Pulsed Drain Current | IDM | 1.0 | |
Power Dissipation | PD | 0.8 |
W |
0.51 | |||
Maximum Junction-to-Ambient | RthJA | 156 | /W |
Operating Junction and Storage Temperature Range | TJ, Tstg |
−55 to 150 |