Features: · Power monitoring and switching for 3-volt battery-backup applications· Write-protect control· 2-input decoder for control of up to 4 banks of SRAM· 3-volt primary cell inputs· Less than 10ns chip-enable propagation delay· 5% or 10% supply operationPinoutSpecifications Symbol Para...
BQ2204: Features: · Power monitoring and switching for 3-volt battery-backup applications· Write-protect control· 2-input decoder for control of up to 4 banks of SRAM· 3-volt primary cell inputs· Less than ...
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Symbol | Parameter | Value | Unit | Conditions |
VCC | DC voltage applied on VCC relative to VSS | -0.3 to +7.0 | V | |
VT | DC voltage applied on any pin excluding VCC relative to VSS |
-0.3 to +7.0 | V | VT VCC + 0.3 |
TOPR | Operating temperature | 0 to 70 | Commercial | |
-40 to +85 | Industrial "N" | |||
TSTG | Storage temperature | -55 to +125 | ||
TBIAS | Temperature under bias | -40 to +85 | ||
TSOLDER | Soldering temperature | 260 | For 10 seconds | |
IOUT | VOUT current | 200 | mA |
Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to conditions beyond the operational limits for extended periods of time may affect device reliability.
The CMOS bq2204A SRAM Nonvolatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator of BQ2204 monitors the 5V VCC input for an out-of-tolerance condition. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM.
During a power failure, the external SRAMs are switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAMs are write-protected until a power-valid condition exists.
During power-valid operation, a two-input decoder of BQ2204 transparently selects one of up to four banks of SRAM.