Features: Power monitoring and switching for 3-volt battery-backup applications Write-protectcontrol 3-voltprimarycellinputs Less than 10ns chip-enable propagationdelay 5%or10%supplyoperationPinoutSpecifications Symbol Parameter Value Unit Notes VCC VCC relative to VSS -0.3 to 7.0 V...
bq2201: Features: Power monitoring and switching for 3-volt battery-backup applications Write-protectcontrol 3-voltprimarycellinputs Less than 10ns chip-enable propagationdelay 5%or10%supplyoperationPinoutS...
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Symbol | Parameter | Value | Unit | Notes | |
VCC | VCC relative to VSS | -0.3 to 7.0 | V | ||
VT | DC voltage applied on any pin ex- cluding VCC relative to VSS |
-0.3 to 7.0 | V | VT VCC + 0.3 | |
TOPR | Operating ambient temperature | 0 to +70 | °C | Commercial | |
-40 to +85 | °C | Industrial "N" | |||
TSTG | Storage temperature | -55 to +125 | °C | ||
TBIAS | Temperature under bias | -40 to +85 | °C | ||
TSOLDER | Soldering temperature | 260 | °C | For10seconds | |
IOUT | VOUT current | 200 | mA |
The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/writememory.
A precision comparator monitors of bq2201 the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protectanystandardCMOSSRAM.
During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup sup-plies.On a subsequent power-up,the SRAM is write-protected until a power-validconditionexists.
The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.