Features: * On-chip bias resistor (R1 = 4.7 k, R2 = 10 k)* Complementary transistor with BA1L3NSpecifications Parameter Symbol Ratings Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −50 V Emitter to base voltage VEBO −5 V ...
BN1L3N: Features: * On-chip bias resistor (R1 = 4.7 k, R2 = 10 k)* Complementary transistor with BA1L3NSpecifications Parameter Symbol Ratings Unit Collector to base voltage VCBO −60 V ...
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Parameter | Symbol | Ratings | Unit |
Collector to base voltage | VCBO | −60 | V |
Collector to emitter voltage | VCEO | −50 | V |
Emitter to base voltage | VEBO | −5 | V |
Collector current (DC) | IC(DC) | −100 | mA |
Collector current (Pulse) | IC(pulse) | −200 | mA |
Total power dissipation | PT | 250 | mW |
Junction temperature | Tj | 150 | °C |
Storage temperature | Tstg | −55 to +150 | °C |