BN1L3M

Features: * On-chip bias resistor (R1 = 4.7 k, R2 = 4.7 k)* Complementary transistor with BA1L3MSpecifications Parameter Symbol Ratings Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −50 V Emitter to base voltage VEBO W...

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SeekIC No. : 004300913 Detail

BN1L3M: Features: * On-chip bias resistor (R1 = 4.7 k, R2 = 4.7 k)* Complementary transistor with BA1L3MSpecifications Parameter Symbol Ratings Unit Collector to base voltage VCBO ...

floor Price/Ceiling Price

Part Number:
BN1L3M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

* On-chip bias resistor (R1 = 4.7 k, R2 = 4.7 k)
* Complementary transistor with BA1L3M



Specifications

Parameter Symbol Ratings Unit
Collector to base voltage VCBO 60 V
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 10 V
Collector current (DC) IC(DC) 100 mA
Collector current (Pulse) IC(pulse) 200 mA
Total power dissipation PT 250 mW
Junction temperature Tj 150 °C
Storage temperature Tstg 55 to +150 °C



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