BLW87

Pinout




Specifications

Collector-base voltage (open emitter)(peak value); VBE =0 open base	VCBSM	max.	36v
Collector-emitter voltage (open base)	Vceo	max.	18v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC(AV)	max.	6 A
(peak value); f > 1 MHz	ICM	max.	12 A
Total power dissipation
at Tmb = 94 °C; f > 1 MHz	P (r.f.)	max.	76W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW87 intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The BLW87 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.

BLW87 has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.