BLW81

Pinout

Specifications

Collector-base voltage (open emitter)(peak value); VBE =0 open base	VCBSM	max.	36v
Collector-emitter voltage (open base)	Vceo	max.	17v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC	max.	2.5 A
(peak value); f > 1 MHz	ICM	max.	7.5 A
Total power dissipation
at Tmb = 94 °C; f > 1 MHz	Ptot	max.	40 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW81 intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions.

The BLW81 is housed in a 1/4" capstan envelope with a ceramic cap.