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BLW77

Transistors RF Bipolar Power RF Transistor

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SeekIC No. : 00218304 Detail

BLW77: Transistors RF Bipolar Power RF Transistor

BLW77 Data Sheet

floor Price/Ceiling Price

US $ 28.8~43.2 / Piece | Get Latest Price
Part Number:
BLW77
Mfg:
Advanced Semiconductor, Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~50
  • Unit Price
  • $43.2
  • $36
  • $32.4
  • $28.8
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Maximum Operating Frequency : 28 MHz Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 3 V Continuous Collector Current : 12 A
Maximum DC Collector Current : 30 A Power Dissipation : 245 W
Package / Case : SOT-123 Packaging : Tray    

Description

Configuration :
Collector- Emitter Voltage VCEO Max : 35 V
Packaging : Tray
Emitter- Base Voltage VEBO : 3 V
Maximum DC Collector Current : 30 A
Package / Case : SOT-123
Maximum Operating Frequency : 28 MHz
Continuous Collector Current : 12 A
Power Dissipation : 245 W


Features:

N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load
mismatch conditions. Transistors are delivered in matched hFE groups.

The transistor has a1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.


Pinout

Connection Diagram


Specifications

Collector-base voltage (open emitter)peak value VCESM  max. 70v
Collector-emitter voltage (open base) Vceo  max. 35v
Emitter-base voltage (open collector)  Vebo  max. 4v
Collector current (average)    IC(AV)  max. 12 A
Collector current (peak value); f > 1 MHz   ICM  max. 30 A
D.C. and r.f. (f > 1 MHz) power
dissipation; Tmb = 25 °C  Ptot ,Prf max. 245 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C



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