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BLV99/SL

Features: * Emitter-ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 50 V VCES collector-emitter voltage open b...

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SeekIC No. : 004300712 Detail

BLV99/SL: Features: * Emitter-ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNI...

BLV99/SL Data Sheet

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Part Number:
BLV99/SL
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Emitter-ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCES collector-emitter voltage open base  27 V
VEBO emitter-base voltage open collector 3.5 V
IC collector current DC or average value 200 A
ICM collector current peak value f > 1 MHz 600 A
Ptot total power dissipation f > 1 MHz;Ts = 103 °C
(note 1)		 6 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar epitaxial transistor BLV99/SL encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base.


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