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BLV909

Features: * Emitter ballasting resistors for optimum temperature profile * Gold metallization ensures excellent reliability* Internal input matching to achieve high power gain and easy design of wideband circuits.Application* Common emitter class-AB operation in base stations in the 820 to 960 MHz...

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SeekIC No. : 004300698 Detail

BLV909: Features: * Emitter ballasting resistors for optimum temperature profile * Gold metallization ensures excellent reliability* Internal input matching to achieve high power gain and easy design of wid...

BLV909 Data Sheet

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Part Number:
BLV909
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/11

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Product Details

Description



Features:

* Emitter ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability
* Internal input matching to achieve high power gain and easy design of wideband circuits.


Application

* Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 70 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 3 V
IC collector current(DC) 1.5 A
IC(AV) average collector current 1.5 A
Ptot total power dissipation Tmb =25 °C; note 1 29 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar epitaxial transistor BLV909 in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base.


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