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BLV97CE

Features: * Internal input matching to achieve high power gain* Ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliabilityPinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 50 V...

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SeekIC No. : 004300710 Detail

BLV97CE: Features: * Internal input matching to achieve high power gain* Ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliabilityPinoutSpecifications SYM...

BLV97CE Data Sheet

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Part Number:
BLV97CE
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

* Internal input matching to achieve high power gain
* Ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCES collector-emitter voltage open base  27 V
VEBO emitter-base voltage open collector 3.5 V
IC collector current DC or average value 3 A
ICM collector current peak value f > 1 MHz 9 A
Ptot total power dissipation f > 1 MHz;Ts = 25 °C
(note 1)		 75 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar epitaxial transistor BLV97CE in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor BLV97CE has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange.


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