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BLV950

Features: * Internal input and output matching for easy matching,high gain and efficiency* Poly-silicon emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability.Application* Base station transmitters in the 800 to 960 MHz range.PinoutSpecifi...

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SeekIC No. : 004300707 Detail

BLV950: Features: * Internal input and output matching for easy matching,high gain and efficiency* Poly-silicon emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures ex...

BLV950 Data Sheet

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Part Number:
BLV950
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

* Internal input and output matching for easy matching,high gain and efficiency
* Poly-silicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.


Application

* Base station transmitters in the 800 to 960 MHz range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 70 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 3 V
IC collector current DC or average value 12 A
ICM collector current peak value f > 1 MHz 12 A
Ptot total power dissipation f > 1 MHz;Ts = 103 °C
(note 1)		 340 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

Two NPN silicon planar epitaxial transistors BLV950 in push-pull configuration, intended for linear common emitter class-AB operation. The transistors BLV950 are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps. The flange provides the common emitter connection for both transistors.


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