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BLV935

Features: * Emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability* Internal input matching to achieve high power gain and easy design of wideband circuits.Application* Base stations in the 820 to 980 MHz range.PinoutSpecifications SY...

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SeekIC No. : 004300705 Detail

BLV935: Features: * Emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability* Internal input matching to achieve high power gain and easy design of w...

BLV935 Data Sheet

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Part Number:
BLV935
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability
* Internal input matching to achieve high power gain and easy design of wideband circuits.


Application

* Base stations in the 820 to 980 MHz range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 70 V
VCES collector-emitter voltage open base  30 V
VEBO emitter-base voltage open collector 3 V
IC collector current(DC) 4 A
IC(AV) average collector current 4 A
Ptot total power dissipation up to Tmb =25 °C 70 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar epitaxial transistor BLV935 intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap. All leads are isolated from the flange.


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