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BLV93

Features: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile* internal input matching to achieve an optimum wideband capability and high power gain* gold metallization ensures excellent reliability.PinoutSpecifications Collector-base voltage (open emi...

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SeekIC No. : 004300703 Detail

BLV93: Features: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile* internal input matching to achieve an optimum wideband capability and high power gain* gold meta...

BLV93 Data Sheet

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Part Number:
BLV93
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* internal input matching to achieve an optimum wideband capability and high power gain
* gold metallization ensures excellent reliability.


Pinout

Connection Diagram


Specifications

Collector-base voltage (open emitter)peak value VCBSM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16v
Emitter-base voltage (open collector)  Vebo  max. 3v
Collector current
d.c. or average    IC(AV)  max. 1.6 A
(peak value); f > 1 MHz   ICM  max. 4.8 A
Total power dissipation Ptot(dc)           max.     18W

at Tmb =94 °C 
at Tmb = 94 °C; f > 1 MHz 

 Ptot (r.f.) max. 24 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C




Description

N-P-N silicon planar epitaxial transistor BLV93 primarily intended for use in mobile radio transmitters in the 900 MHz communications band.


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