Transistors RF MOSFET Power LDMOS TNS
BLS6G3135-20,112: Transistors RF MOSFET Power LDMOS TNS
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $597.39 - 597.39 / Piece
Transistors RF MOSFET Power WBAND 3.1GHz 32V
Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 3.1 GHz to 3.5 GHz | Gain : | 15.5 dB |
Output Power : | 20 W | Drain-Source Breakdown Voltage : | 60 V |
Continuous Drain Current : | 2.1 A | Gate-Source Breakdown Voltage : | 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-608A |
Packaging : | Tube |
Technical/Catalog Information | BLS6G3135-20,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 60V |
Current Rating | 2.1A |
Package / Case | * |
Packaging | Tray |
Drawing Number | 568; SOT608; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLS6G3135 20,112 BLS6G313520,112 |