BLF888BS,112, US $ 121.6-121.6 , NXP Semiconductors, BLF888BS,112 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00219742 Detail

BLF888BS,112: Transistors RF MOSFET Power UHF pwr LDMOS transistor

BLF888BS,112 Data Sheet

US $ 121.6~121.6 / Piece | Get Latest Price

Part Number:: BLF888BS,112
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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$121.6

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Upload time: 2024/11/22

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Transistors RF MOSFET Power RF Transistor

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Configuration :	Dual	Transistor Polarity :	N-Channel
Frequency :	470 MHz to 860 MHz	Gain :	21 dB at 860 MHz
Output Power :	250 W	Drain-Source Breakdown Voltage :	104 V
Continuous Drain Current :	38 A	Gate-Source Breakdown Voltage :	11 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	SOT-539B
Packaging :	Tube

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : 11 V
Packaging : Tube
Package / Case : SOT-539B
Frequency : 470 MHz to 860 MHz
Output Power : 250 W
Gain : 21 dB at 860 MHz
Drain-Source Breakdown Voltage : 104 V
Continuous Drain Current : 38 A

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BLF888BS,112

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