Transistors RF MOSFET Power UHF POWER LDMOS TRANSISTOR
BLF888AS,112: Transistors RF MOSFET Power UHF POWER LDMOS TRANSISTOR
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 470 MHz to 860 MHz | Gain : | 21 dB at 860 MHz |
Output Power : | 250 W | Drain-Source Breakdown Voltage : | 110 V |
Continuous Drain Current : | 36 A | Gate-Source Breakdown Voltage : | 11 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-539B |
Packaging : | Tube |