BLF888,112, US $ 161.98-161.98 , NXP Semiconductors, BLF888,112 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00219883 Detail

BLF888,112: Transistors RF MOSFET Power TRANSISTOR RF PWR LDMOS

BLF888,112 Data Sheet

US $ 161.98~161.98 / Piece | Get Latest Price

Part Number:: BLF888,112
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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$161.98

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Upload time: 2025/12/15

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Transistors RF MOSFET Power RF Transistor

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Configuration :	Dual	Transistor Polarity :	N-Channel
Frequency :	470 MHz to 860 MHz	Gain :	19 dB at 860 MHz
Output Power :	250 W	Drain-Source Breakdown Voltage :	104 V
Continuous Drain Current :	43 A	Gate-Source Breakdown Voltage :	11 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	SOT-979A
Packaging :	Tube

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : 11 V
Packaging : Tube
Frequency : 470 MHz to 860 MHz
Output Power : 250 W
Drain-Source Breakdown Voltage : 104 V
Gain : 19 dB at 860 MHz
Continuous Drain Current : 43 A
Package / Case : SOT-979A

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BLF888,112

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