Transistors RF MOSFET Power UHF power LDMOS transistor
BLF881,112: Transistors RF MOSFET Power UHF power LDMOS transistor
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1 GHz | Gain : | 21 dB at 858 MHz |
Output Power : | 33 W | Drain-Source Breakdown Voltage : | 104 V |
Continuous Drain Current : | 21 A | Gate-Source Breakdown Voltage : | 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-467C |
Packaging : | Tube |