Transistors RF MOSFET Power LDMOS TNS
BLF878,112: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Dual Common Source | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 89 V | Gate-Source Breakdown Voltage : | 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT502B |
Packaging : | Tube |
Technical/Catalog Information | BLF878,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 42V |
Current Rating | 1.4A |
Package / Case | 5-LDMOST, SOT979A |
Packaging | Tray |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF878,112 BLF878,112 568 4738 ND 5684738ND 568-4738 |