Transistors RF MOSFET Power RF LDMOS 300W UHF
BLF872,112: Transistors RF MOSFET Power RF LDMOS 300W UHF
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Configuration : | Dual Common Source | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 65 V | Gate-Source Breakdown Voltage : | +/- 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | LDMOST-3 |
Packaging : | Tube |
Technical/Catalog Information | BLF872,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 65V |
Current Rating | 2.2uA |
Package / Case | 4-LDMOST, SOT800-1 |
Packaging | Tray |
Drawing Number | 568; SOT800; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF872,112 BLF872,112 568 2408 ND 5682408ND 568-2408 |