Transistors RF MOSFET Power RF LDMOS 300W UHF
BLF872: Transistors RF MOSFET Power RF LDMOS 300W UHF
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Configuration : | Dual Common Source | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 65 V | Gate-Source Breakdown Voltage : | +/- 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | LDMOST-3 |
Packaging : | Tube |