Transistors RF MOSFET Power Trans MOSFET N-CH 89V 3-Pin
BLF871,112: Transistors RF MOSFET Power Trans MOSFET N-CH 89V 3-Pin
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1 GHz | Gain : | 22 dB at 858 MHz |
Output Power : | 24 W | Drain-Source Breakdown Voltage : | 89 V |
Continuous Drain Current : | 20 A | Gate-Source Breakdown Voltage : | 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-467C |
Packaging : | Tube |
Technical/Catalog Information | BLF871,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 40V |
Current Rating | 0.5A |
Package / Case | 2-LDMOST, SOT467C |
Packaging | Tray |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF871,112 BLF871,112 568 4737 ND 5684737ND 568-4737 |