Transistors RF MOSFET Power LDMOS TNS
BLF6G38LS-100,112: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 3.4 GHz to 3.6 GHz | Gain : | 13 dB |
Output Power : | 18.5 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 34 A | Gate-Source Breakdown Voltage : | 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-502B |
Packaging : | Tube |
Technical/Catalog Information | BLF6G38LS-100,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 65V |
Current Rating | 3.1A |
Package / Case | 3-LDMOST, SOT502A |
Packaging | Tray |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF6G38LS 100,112 BLF6G38LS100,112 |