Transistors RF MOSFET Power LDMOS TNS
BLF6G38-10,118: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 65 V | Continuous Drain Current : | 49 A | ||
Gate-Source Breakdown Voltage : | - 0.5 V to + 13 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | CDFM | Packaging : | Reel |
Technical/Catalog Information | BLF6G38-10,118 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 65V |
Current Rating | 3.1A |
Package / Case | 2-LDMOST, SOT957A |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF6G38 10,118 BLF6G3810,118 |