Transistors RF MOSFET Power LDMOS TNS
BLF6G27-45,112: Transistors RF MOSFET Power LDMOS TNS
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| Configuration : | Single | Transistor Polarity : | N-Channel | ||
| Drain-Source Breakdown Voltage : | 65 V | Continuous Drain Current : | 20 A | ||
| Gate-Source Breakdown Voltage : | - 0.5 V, 13 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | CDFM | Packaging : | Tube |
| Technical/Catalog Information | BLF6G27-45,112 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Transistor Type | LDMOS |
| Voltage - Rated | 65V |
| Current Rating | 20A |
| Package / Case | * |
| Packaging | Tray |
| Drawing Number | 568; SOT-608A; ; |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BLF6G27 45,112 BLF6G2745,112 |