Transistors RF MOSFET Power LDMOS TNS
BLF6G27-135,112: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 65 V | Continuous Drain Current : | 34 A | ||
Gate-Source Breakdown Voltage : | 13 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT502B | Packaging : | Tube |
Technical/Catalog Information | BLF6G27-135,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 65V |
Current Rating | 34A |
Package / Case | 2-LDMOST, SOT502A |
Packaging | Tray |
Drawing Number | 568; SOT502; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF6G27 135,112 BLF6G27135,112 |