Transistors RF MOSFET Power LDMOS TNS
BLF6G22LS-100: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 65 V | Continuous Drain Current : | 29 A | ||
Gate-Source Breakdown Voltage : | 13 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT502B | Packaging : | Tube |