Transistors RF MOSFET Power LDMOS TNS
BLF6G22-45,112: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 2 GHz to 2.2 GHz | Gain : | 18.5 dB |
Output Power : | 2.5 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 12.5 A | Gate-Source Breakdown Voltage : | 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-608A |
Packaging : | Tube |
Technical/Catalog Information | BLF6G22-45,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 65V |
Current Rating | - |
Package / Case | * |
Packaging | Tray |
Drawing Number | 568; SOT608; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF6G22 45,112 BLF6G2245,112 |