Transistors RF MOSFET Power LDMOS TNS
BLF6G22-180PN,112: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Dual Common Source | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 65 V | Gate-Source Breakdown Voltage : | 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT502B |
Packaging : | Tube |
Technical/Catalog Information | BLF6G22-180PN,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 65V |
Current Rating | - |
Package / Case | 5-LDMOST, SOT539A |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF6G22 180PN,112 BLF6G22180PN,112 |