Transistors RF MOSFET Power LDMOS TNS
BLF6G20LS-140,112: Transistors RF MOSFET Power LDMOS TNS
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Configuration : | Single | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 65 V | Continuous Drain Current : | 13 A | ||
Gate-Source Breakdown Voltage : | 13 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT502B | Packaging : | Tube |
Technical/Catalog Information | BLF6G20LS-140,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 65V |
Current Rating | 39A |
Package / Case | 2-LDMOST, SOT502B |
Packaging | Tray |
Drawing Number | 568; SOT502; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF6G20LS 140,112 BLF6G20LS140,112 568 4419 ND 5684419ND 568-4419 |