Transistors RF MOSFET Power LDMOS TNS
BLF6G10LS-135R,118: Transistors RF MOSFET Power LDMOS TNS
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 0.7 GHz to 1 GHz | Gain : | 21 dB |
Output Power : | 26.5 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 32 A | Gate-Source Breakdown Voltage : | +/- 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-502B |
Packaging : | Reel |
Technical/Catalog Information | BLF6G10LS-135R,118 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 65V |
Current Rating | 32A |
Package / Case | 2-LDMOST, SOT502B |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF6G10LS 135R,118 BLF6G10LS135R,118 |