Transistors RF MOSFET Power LDMOS TNS
BLF647A,112: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 800 MHz | Gain : | 12.5 dB |
Output Power : | 150 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 18 A | Gate-Source Breakdown Voltage : | +/- 15 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-540A |
Packaging : | Tube |
Technical/Catalog Information | BLF647A,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 65V |
Current Rating | 18A |
Package / Case | 4-LDMOST, SOT540A |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF647A,112 BLF647A,112 |