Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 800 MHz | Gain : | 12.5 dB |
Output Power : | 150 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 18 A | Gate-Source Breakdown Voltage : | +/- 15 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-540A |
Packaging : | Tube |