Transistors RF MOSFET Power LDMOS TNS
BLF4G20LS-110B: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 65 V | Continuous Drain Current : | 12 A | ||
Gate-Source Breakdown Voltage : | 15 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | LDMOST-3 | Packaging : | Tube |