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BLF4G10-160,112

Transistors RF MOSFET Power LDMOS TNS

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SeekIC No. : 00220398 Detail

BLF4G10-160,112: Transistors RF MOSFET Power LDMOS TNS

BLF4G10-160,112 Data Sheet

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Part Number:
BLF4G10-160,112
Mfg:
NXP Semiconductors
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 65 V Continuous Drain Current : 15 A
Gate-Source Breakdown Voltage : 15 V Maximum Operating Temperature : + 150 C
Package / Case : LDMOST-3 Packaging : Tube    

Description

Frequency :
Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : 15 V
Continuous Drain Current : 15 A
Package / Case : LDMOST-3


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