BGA427E-6327

DescriptionThe BGA427E-6327 is one of the BGA427 series.That is a Si-MMIC-Amplifier in SIEGET 25-Technologie.Features of the BGA427E-6327 are:(1)Cascadable 50 W-gain block;(2)Unconditionally stable;(3)Gain |S21|2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21|2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm...

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SeekIC No. : 004300103 Detail

BGA427E-6327: DescriptionThe BGA427E-6327 is one of the BGA427 series.That is a Si-MMIC-Amplifier in SIEGET 25-Technologie.Features of the BGA427E-6327 are:(1)Cascadable 50 W-gain block;(2)Unconditionally stable;...

floor Price/Ceiling Price

Part Number:
BGA427E-6327
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Description

The BGA427E-6327 is one of the BGA427 series.That is a Si-MMIC-Amplifier in SIEGET 25-Technologie.

Features of the BGA427E-6327 are:(1)Cascadable 50 W-gain block;(2)Unconditionally stable;(3)Gain |S21|2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21|2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA);(4)Noise figure NF = 2.2 dB at 1.8 GHz;(5)typical device voltage VD = 2 V to 5 V;(6)Reverse isolation < 35 dB (appl.2).

The absolute maximum ratings of the BGA427E-6327 can be summarized as:(1)Device current:25 mA;(2)Device voltage:6 V;(3)Total power dissipation, TS tbd °C:150 mW;(4)RF input power:-10 dBm;(5)Junction temperature:150 °C;(6)Ambient temperature:-65 ...+150°C;(7)Storage temperature:-65 ...+150°C.




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