DescriptionThe BGA427E-6327 is one of the BGA427 series.That is a Si-MMIC-Amplifier in SIEGET 25-Technologie.Features of the BGA427E-6327 are:(1)Cascadable 50 W-gain block;(2)Unconditionally stable;(3)Gain |S21|2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21|2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm...
BGA427E-6327: DescriptionThe BGA427E-6327 is one of the BGA427 series.That is a Si-MMIC-Amplifier in SIEGET 25-Technologie.Features of the BGA427E-6327 are:(1)Cascadable 50 W-gain block;(2)Unconditionally stable;...
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The BGA427E-6327 is one of the BGA427 series.That is a Si-MMIC-Amplifier in SIEGET 25-Technologie.
Features of the BGA427E-6327 are:(1)Cascadable 50 W-gain block;(2)Unconditionally stable;(3)Gain |S21|2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21|2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA);(4)Noise figure NF = 2.2 dB at 1.8 GHz;(5)typical device voltage VD = 2 V to 5 V;(6)Reverse isolation < 35 dB (appl.2).
The absolute maximum ratings of the BGA427E-6327 can be summarized as:(1)Device current:25 mA;(2)Device voltage:6 V;(3)Total power dissipation, TS tbd °C:150 mW;(4)RF input power:-10 dBm;(5)Junction temperature:150 °C;(6)Ambient temperature:-65 ...+150°C;(7)Storage temperature:-65 ...+150°C.