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BGA416

Features: •GMA = 23dB at 900MHz• Ultra high reverse isolation, 62 dB at 900MHz• Low noise figure, F50Ω = 1.3dB at 900MHz• On chip bias circuitry,5.5 mA bias current at VCC = 3V• Typical supply voltage: 2.5 to 5.0V •SIEGET®-25 technologyApplication̶...

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SeekIC No. : 004300099 Detail

BGA416: Features: •GMA = 23dB at 900MHz• Ultra high reverse isolation, 62 dB at 900MHz• Low noise figure, F50Ω = 1.3dB at 900MHz• On chip bias circuitry,5.5 mA bias current at ...

BGA416 Data Sheet

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Part Number:
BGA416
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Description



Features:

•GMA = 23dB at 900MHz
• Ultra high reverse isolation, 62 dB at 900MHz
• Low noise figure, F50Ω = 1.3dB at 900MHz
• On chip bias circuitry,5.5 mA bias current at VCC = 3V
• Typical supply voltage: 2.5 to 5.0V
•SIEGET®-25 technology


Application

• Buffer amplifiers
• LNAs
• Oscillator active devices


Specifications

Parameter Symbol Value Unit
Voltage at pin RFout VOUT 6 V
Current into pin RFin IIN 0.5 mA
Device current 1) ID 20 mA
Input power IIN 8 dBm
Total power dissipation, TS < 123°C 2) Ptot 100 mW
Junction temperature Tj 150
Ambient temperature range TA -65 ... +150
Storage temperature range TSTG -65 ... +150
Thermal resistance: junction-soldering point Rth JS 270 K/W

Notes:
All Voltages refer to GND-Node
1) Device current is equal to current into pin RFout
2) TS is measured on the ground lead at the soldering point




Description

BGA416 is a monolithic silicon cascode mplifier with high reverse isolation. A ias network is integrated for simplified iasing.




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