Features: •GMA = 23dB at 900MHz• Ultra high reverse isolation, 62 dB at 900MHz• Low noise figure, F50Ω = 1.3dB at 900MHz• On chip bias circuitry,5.5 mA bias current at VCC = 3V• Typical supply voltage: 2.5 to 5.0V •SIEGET®-25 technologyApplication̶...
BGA416: Features: •GMA = 23dB at 900MHz• Ultra high reverse isolation, 62 dB at 900MHz• Low noise figure, F50Ω = 1.3dB at 900MHz• On chip bias circuitry,5.5 mA bias current at ...
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Parameter | Symbol | Value | Unit |
Voltage at pin RFout | VOUT | 6 | V |
Current into pin RFin | IIN | 0.5 | mA |
Device current 1) | ID | 20 | mA |
Input power | IIN | 8 | dBm |
Total power dissipation, TS < 123°C 2) | Ptot | 100 | mW |
Junction temperature | Tj | 150 | |
Ambient temperature range | TA | -65 ... +150 | |
Storage temperature range | TSTG | -65 ... +150 | |
Thermal resistance: junction-soldering point | Rth JS | 270 | K/W |
Notes:
All Voltages refer to GND-Node
1) Device current is equal to current into pin RFout
2) TS is measured on the ground lead at the soldering point
BGA416 is a monolithic silicon cascode mplifier with high reverse isolation. A ias network is integrated for simplified iasing.