Features: · High breakdown voltages· Low output capacitance· High gain bandwidth· Good thermal stability· Gold metallization ensures excellent reliability.Application· Buffer/driver in high-resolution colour graphics monitors.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. U...
BFQ251: Features: · High breakdown voltages· Low output capacitance· High gain bandwidth· Good thermal stability· Gold metallization ensures excellent reliability.Application· Buffer/driver in high-resoluti...
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SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage |
open emitter |
- |
-100 |
V |
VCEO | collector-emitter voltage |
open base |
- |
-65 |
V |
VCER | collector-emitter voltage |
RBE = 100 |
- |
-95 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-3 |
V |
IC | collector current (DC) |
see Fig.2 |
- |
-300 |
mA |
Ptot | total power dissipation |
Ts 65 °C; notes 1 and 2; see Fig.3 |
- |
1 |
W |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
175 |
°C |
Notes
1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.