Specifications Parameter Symbol Values Unit Collector-emitter voltage VCEO 2.5 v Collector-base voltage VCBO 12 v Emitter-base voltage VEBO 1 v collector current IC 40 mA Base current IB 4 mA Total power d...
BFP 520: Specifications Parameter Symbol Values Unit Collector-emitter voltage VCEO 2.5 v Collector-base voltage VCBO 12 v Emitter-base voltage VEBO 1...
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Transistors RF Bipolar Small Signal NPN Silicon RF TRANSISTOR
Parameter |
Symbol |
Values |
Unit |
Collector-emitter voltage |
VCEO |
2.5 |
v
|
Collector-base voltage |
VCBO |
12 |
v |
Emitter-base voltage |
VEBO |
1 |
v |
collector current |
IC |
40 |
mA |
Base current |
IB |
4 |
mA |
Total power dissipation, TS 105 °C |
Ptot |
100 |
W |
Junction temperature |
TJ |
150 |
°C |
Ambient temperature |
TA |
- 65 ... + 150 |
°C |
Storage Temperature |
TSTG |
-65 ...+150 |
°C |