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BFP 490

Features: · For high power amplifiers· Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz· Transition frequency fT > 17 GHz· Gold metalization for high reliability· SIEGET® 25 - Line Siemens Grounded Emitter Transistor 25 GHz fT - LineSpecifications ...

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BFP 490: Features: · For high power amplifiers· Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz· Transition frequency fT > 17 GHz· Gold metalization for high re...

BFP 490 Data Sheet

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Part Number:
BFP 490
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· For high power amplifiers
· Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz
· Transition frequency fT > 17 GHz
· Gold metalization for high reliability
· SIEGET ® 25 - Line
      Siemens Grounded Emitter Transistor
       25 GHz fT - Line




Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
4.5
V
Collector-base voltage
VCBO
15
Emitter-base voltage
VEBO
1.5
Collector current
IC
600
mA
Base current
IB
60
Total power dissipation
TS 85°C
Ptot
1000
W
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
RthJS
65
K/W


1) TS is measured on the emitter lead at the soldering point mounted on alumina 15 mm x 16,7 mm x 0.7 mm




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