Features: · For high power amplifiers· Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz· Transition frequency fT > 17 GHz· Gold metalization for high reliability· SIEGET® 25 - Line Siemens Grounded Emitter Transistor 25 GHz fT - LineSpecifications ...
BFP 490: Features: · For high power amplifiers· Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz· Transition frequency fT > 17 GHz· Gold metalization for high re...
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Transistors RF Bipolar Small Signal NPN Silicon RF TRANSISTOR
· For high power amplifiers
· Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz
· Transition frequency fT > 17 GHz
· Gold metalization for high reliability
· SIEGET ® 25 - Line
Siemens Grounded Emitter Transistor
25 GHz fT - Line
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
4.5 |
V |
Collector-base voltage |
VCBO |
15 | |
Emitter-base voltage |
VEBO |
1.5 | |
Collector current |
IC |
600 |
mA |
Base current |
IB |
60 | |
Total power dissipation TS 85°C |
Ptot |
1000 |
W |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
-65 ... 150 | |
Storage temperature |
Tstg |
-65 ... 150 | |
Thermal Resistance | |||
Parameter |
Symbol |
Value |
Unit |
Junction - soldering point1) |
RthJS |
65 |
K/W |
1) TS is measured on the emitter lead at the soldering point mounted on alumina 15 mm x 16,7 mm x 0.7 mm