Features: ·High breakdown voltage·Low collector-emitter saturation voltage·Low capacitance· Complementary types: BFP 22, BFP 25 (NPN)Specifications Parameter Symbol Values Unit BFP 23 BFP 26 Collector-emitter voltage VCE0 200 300 V Collector-base voltage ...
BFP 26: Features: ·High breakdown voltage·Low collector-emitter saturation voltage·Low capacitance· Complementary types: BFP 22, BFP 25 (NPN)Specifications Parameter Symbol Values Unit ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.05 - .06 / Piece
Transistors RF Bipolar Small Signal NPN Silicon RF TRANSISTOR
Parameter |
Symbol |
Values |
Unit | |
BFP 23 |
BFP 26 | |||
Collector-emitter voltage |
VCE0 |
200 |
300 |
V |
Collector-base voltage |
VCB0 |
200 |
300 | |
Emitter-base voltage |
VEB0 |
6 |
||
Collector current |
IC |
200 |
mA | |
Peak collector current |
ICM |
500 | ||
Base current |
IB |
100 | ||
Peak base current |
IBM |
200 | ||
Total power dissipation, TC = 66 °C |
Ptot |
625 |
mW | |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature range |
Tstg |
65 . + 150 | ||
Thermal Resistance | ||||
Junction - ambient |
Rth JA |
200 |
K/W | |
Junction - case2) |
Rth JC |
135 |
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm * 25 mm * 0.5 mm.