BFP420E6327

TRANS NPN RF 4.5V SOT-343

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SeekIC No. : 003435099 Detail

BFP420E6327: TRANS NPN RF 4.5V SOT-343

floor Price/Ceiling Price

Part Number:
BFP420E6327
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Quick Details

Series: - Manufacturer: Infineon Technologies
Transistor Type: NPN Typical Resistor Ratio : 1 at NPN, 4.7 at PNP
Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB
Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Current - Collector (Ic) (Max): 35mA Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4    

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
Package / Case: SC-82A, SOT-343
Frequency - Transition: 25GHz
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT343-4
Power - Max: 160mW
Packaging: Cut Tape (CT)
Gain: 21dB
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V


Description

The BFP420E6327 is designed as one kind of NPN silicon RF transistor that has six points of features:(1)For high gain low noise amplifiers; (2)For oscillators up to 10 GHz; (3)Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz; (4)Transition frequency fT = 25 GHz; (5)Gold metalization for high reliability; (6)SIEGET a 25 - Line Siemens Grounded Emitter Transistor 25 GHz fT - Line.

The absolute maximum ratings of the BFP420E6327 can be summarized as:(1)Collector-emitter voltage: 4.5 V;(2)Collector-base voltage: 15 V;(3)Emitter-base voltage: 1.5 V;(4)Collector current: 35 mA;(5)Base current: 3 mA;(6)Total power dissipation, TS </= 107 °C: 160 mW;(7)Junction temperature: 150 °C;(8)Ambient temperature: -65 °C to +150 °C;(9)Storage temperature: -65 °C to +150 °C. If you want to know more information such as the electrical characteristics about the BFP420E6327, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationBFP420E6327
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)1.1dB @ 1.8GHz
Current - Collector (Ic) (Max)35mA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 20mA, 4V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4.5V
Gain21dB
Power - Max160mW
Compression Point (P1dB)12dBm
Package / CaseSC-70-4, SC-82AB, SOT-323-4, SOT-343
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BFP420E6327
BFP420E6327
BFP420INTR ND
BFP420INTRND
BFP420INTR



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